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Record W4200551069 · doi:10.1116/6.0001352

Strain engineering in III-V photonic components through structuration of SiNx films

2021· article· en· W4200551069 on OpenAlexaff
Brahim Ahammou, Aysegul Abdelal, Jean-Pierre Landesman, Christophe Levallois, Peter Mascher

Bibliographic record

VenueJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2021
Typearticle
Languageen
FieldEngineering
TopicAdvanced Surface Polishing Techniques
Canadian institutionsMcMaster University
Fundersnot available
KeywordsMaterials scienceEllipsometryThin filmOptoelectronicsWaferChemical vapor depositionStrain engineeringSemiconductorOpticsSiliconNanotechnology

Abstract

fetched live from OpenAlex

We describe work to quantify the effects of structured dielectric thin films, such as SiNx, at the surface of III-V semiconductors, in terms of strain engineering with applications to photonic components such as waveguides and lasers. We show that the strain in the semiconductor can be engineered by controlling the stress in the dielectric thin film by tuning its deposition process. In the first part of this study, we describe how we can control the amount of this built-in mechanical stress, in the case of SiNx, over a large range, from highly tensile (300 MPa) to highly compressive (−800 MPa), using two different kinds of plasma-enhanced chemical vapor deposition reactors: a standard capacitively coupled reactor with radiofrequency excitation and an electron cyclotron resonance reactor with microwave excitation. We focused on characterizing and understanding these thin films' optical and chemical bonding properties through spectroscopic ellipsometry and Fourier transform infrared spectroscopy. We have also studied their mechanical properties experimentally using the wafer curvature measurement technique, microstructure fabrication, and nanoindentation measurements. In the second part, we show accurate measurements of the strain distribution induced within GaAs wafers when such thin films are structured in the shape of elongated stripes of variable width, using standard optical lithography and plasma etching. For this, we map the anisotropic deformation, measuring the degree of polarization of the spectrally integrated photoluminescence (PL) generated within GaAs by excitation with a red laser. PL from the bulk cubic semiconductors such as GaAs and InP is unpolarized, whereas anisotropic strain produces some degree of polarization. These maps were measured either from the semiconductor surface or from cleaved cross sections. They provide a detailed and complete image of the crystal deformation in the vicinity of the structured stressor film. Finally, we have performed some finite element simulations trying to reproduce the experimental maps. This investigation covering the different steps, including control of the built-in stress within the SiNx thin films, mapping of the anisotropic deformation field generated within the semiconductor beneath the structured films, and numerical simulation of these effects, allows us to propose a set of recipes that can be employed for strain engineering of III-V photonic components. Our simulation scheme is helpful for the design of the photonic components, e.g., to predict the local changes in the refractive index due to the photoelastic effect.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame machine prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. The Gemma side is a direct model label for every work in the frame, read from the title-only record. The Codex side is a classifier learned from the 10,348 direct Codex labels and calibrated to design-weighted sample rates; fields without enough sample support carry no Codex call. Candidate is the union of the two sides; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: metacan-v3-hybrid-931329e0061cValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.001
Threshold uncertainty score0.002

Distilled classifier scores by category (both heads)

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0010.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.013
GPT teacher head0.226
Teacher spread0.214 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one source (direct Gemma or distilled Codex), not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations10
Published2021
Admission routes1
Has abstractyes

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Same venueJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and PhenomenaSame topicAdvanced Surface Polishing TechniquesFrench-language works237,207