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Record W4285726022 · doi:10.1051/epjap/2022220062

Study of electrical properties of Al/Si<sub>3</sub>N<sub>4</sub>/<i>n</i>-GaAs MIS capacitors deposited at low and high frequency PECVD

2022· article· en· W4285726022 on OpenAlexaff
Wafaa Zibar, Olivier Richard, Asmaa Drighil, T. Lachhab, Hasna Mziouek, Vincent Aimez, Abdelatif Jaouad, Rhma Adhiri

Bibliographic record

VenueThe European Physical Journal Applied Physics · 2022
Typearticle
Languageen
FieldEngineering
TopicSemiconductor materials and devices
Canadian institutionsInstitut interdisciplinaire d'innovation technologiqueUniversité de Sherbrooke
Fundersnot available
KeywordsPlasma-enhanced chemical vapor depositionPassivationMaterials scienceSilicon nitrideOptoelectronicsSiliconAnnealing (glass)Electronic engineeringAnalytical Chemistry (journal)NanotechnologyChemistryComposite materialLayer (electronics)

Abstract

fetched live from OpenAlex

As for silicon, surface passivation of GaAs and III-V semiconductors using silicon nitride (Si 3 N 4 ) deposited by plasma enhanced chemical deposition (PECVD) is widely used to improve devices and circuits stability, reliability and for encapsulation. In this work, the effect of plasma excitation frequency in the PECVD reactor on the surface passivation efficiency of GaAs during Si 3 N 4 deposition was investigated. Metal-Insulator-Semiconductor (Al/Si 3 N 4 / n -GaAs) capacitors are fabricated and characterized using capacitance–voltage ( C – V ), and conductance–voltage ( G – V ) to compare electronic properties of GaAs/Si 3 N 4 interfaces depending on the use of a high frequency PECVD (HF-PECVD) or low frequency (LF-PECVD) process. The drastic advantage of using the LF-PECVD technique for the passivation of GaAs is clearly demonstrated on the characteristic C – V at 1 MHz where a good surface potential was observed, while a quasi-pinned surface Fermi level was found when HF-PECVD was used. To unpin Fermi level, a sulfur pre-treatment prior before HF-PECVD deposition and post-metallisation annealing were necessary. A lower frequency dispersion and a lower hysteresis indicating low densities of slow traps were observed for MIS devices fabricated by LF-PECVD. The advantage of having an efficient passivation without sulfur treatment is important since ammonium sulfide used for this purpose is corrosive and difficult to adapt in industrial environment. The better electronic properties of GaAs/Si 3 N 4 interface were found for silicon nitride layers using LF-PECVD deposition. This can probably be associated with the high-level injection of H + ions on the semiconductor surface reducing thus the native oxides during the initial steps of dielectric deposition.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesMeta-epidemiology (narrow)
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.007
Threshold uncertainty score1.000

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0010.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.001
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.011
GPT teacher head0.182
Teacher spread0.171 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations2
Published2022
Admission routes1
Has abstractyes

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