Defects in Plasma-Activated Amorphous SiO <sub>2</sub> Probed Using Positron Annihilation Spectroscopy
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Bibliographic record
Abstract
Defects introduced by plasma activation in amorphous SiO 2 were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of the incident positron energy for SiO 2 deposited from tetraethylorthosilicate using plasma-enhanced chemical vapor deposition on Si substrates. After N 2 plasma activation, electron (and/or positron) trapping centers were primarily introduced in the subsurface region (≤6 nm). The defect concentration decreased after postplasma processes: deionized water rinsing and additional H 2 O plasma activation, which was associated with the formation of silanol groups at the surface. However, a certain number of defects existed in the subsurface region, and they were not annealed out at the typical annealing temperature for bonding SiO 2 layers (400 °C). Because these defects can cause softening of the top surface region and attract water trapped between two wafers or in SiO 2, they are considered to contribute to the wafer-bonding process.
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Codex and Gemma teacher scores by category
| Category | Codex | Gemma |
|---|---|---|
| Metaresearch | 0.000 | 0.000 |
| Meta-epidemiology (narrow) | 0.000 | 0.000 |
| Meta-epidemiology (broad) | 0.000 | 0.000 |
| Bibliometrics | 0.000 | 0.000 |
| Science and technology studies | 0.000 | 0.000 |
| Scholarly communication | 0.000 | 0.000 |
| Open science | 0.000 | 0.000 |
| Research integrity | 0.000 | 0.000 |
| Insufficient payload (model declined to judge) | 0.000 | 0.000 |
Machine scores (provisional)
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Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.
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