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4,299,418 works, Canadian by any of four routes.

Every filter state is a URL; the URL is the query; the query is citable via /q/⟨hash⟩. The page, the API and the export parse the same parameters.

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The current cohort, streamed from the database: every work column, the machine labels, the provisional scores, and the per-row validation status. Exports are capped at 100,000 rows. Mints a permanent /q/ link for this exact query. The same filters always produce the same link, whoever asks.

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GaN-based semiconductor devices and materials
Retraction
Abstract
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Study design
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Label status

Direct Codex and Gemma labels are unvalidated and sparse. Distilled predictions cover the full frame and are also unvalidated. Choose the evidence source explicitly; absence of a direct label is never a negative label.

affaffiliation
fundfunder
venuejournal
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The four routes compose: require the funder route and exclude affiliation to get the funder-only stratum no affiliation-based frame ever sees.

862 results · 1 filter active ·
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20002025
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Machine labels · sparse coverage
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An unlabeled work is unknown, not a negative. Label coverage is reported on every query.
862 works in the cohort · of 4,299,418page 16 of 18

Labels cover 0 of 862 works in this cohort. The rest are unlabeled, which is not a negative label: the label table is sparse today and grows as labeling rounds land.

Distilled predictions cover 862 of 862 works in this cohort. Predictions are machine_predicted_unvalidated teacher distillation outputs. Candidate is the union; consensus is the intersection.

affunlabeled
Dual band HEIWIP detectors with nitride materials
A. G. U. Perera, Gamini Ariyawansa, R. C. Jayasinghe, Laura E. Byrum, N. Dietz, S. G. Matsik +4 more
2007· article· en· Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE· Physics and Astronomy
distilled prediction:candidate · metaepi_narrowconsensus · none
0
citations
affno abstractunlabeled
InGaN-based Red LEDs (II) low-operation voltage
Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez‐Rizo, Kazuhiro Ohkawa
2020· article· en· The Japan Society of Applied Physics· Physics and Astronomy
distilled prediction:candidate · noneconsensus · none
0
citations
affno abstractunlabeled
InGaN-based red micro-LEDs
Zhe Zhuang, Daisuke Iida, Martin Velazquez‐Rizo, Kazuhiro Ohkawa
2021· article· en· The Japan Society of Applied Physics· Physics and Astronomy
distilled prediction:candidate · noneconsensus · none
0
citations
affunlabeled
Field emission from AlGaN nanowires with low turn-on field
Filippo Giubileo, Antonio Di Bartolomeo, Yun Zhong, Songrui Zhao, M. Passacantando
2020· preprint· en· Nanotechnology· Physics and Astronomy
distilled prediction:candidate · metaepi_narrow+insufficient_payloadconsensus · none
0
citations
affunlabeled
Field Effect Transistor on Hetero-Structure GaN/InxGa1-xN
Dimiter Alexandrov, Rozalina Dimitrrova, Kenneth Butcher, M. Wintrebert‐Fouquet, R. M. Perks
2006· article· en· Physics and Astronomy
distilled prediction:candidate · insufficient_payloadconsensus · none
0
citations
afffundunlabeled
AlGaN nanowire ultraviolet lasers on Si
Songrui Zhao, Xiao Liu, K-H Li, Steffi Y. Woo, Gianluigi A. Botton, Zetian Mi
2015· article· en· Physics and Astronomy
distilled prediction:candidate · insufficient_payloadconsensus · none
0
citations
affunlabeled
Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky
Camille Sonneville, Atse Julien Eric N’dohi, Soufiane Saïdi, Thi Huong Ngo, P. de Mierry, Éric Frayssinet +7 more
2022· preprint· fr· HAL (Le Centre pour la Communication Scientifique Directe)· Physics and Astronomy
distilled prediction:candidate · metaepi_narrow+insufficient_payloadconsensus · none
0
citations
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