MétaCan
Menu
Back to cohort
Record W2063170916 · doi:10.1109/drc.2009.5354935

Short channel vertical transistors with excellent saturation characteristics

2009· article· en· W2063170916 on OpenAlexaff
Maryam Moradi, Arokia Nathan, Hanna M. Haverinen, Ghassan E. Jabbour

Bibliographic record

Venuenot available
Typearticle
Languageen
FieldEngineering
TopicSemiconductor materials and devices
Canadian institutionsIGNIS Innovation (Canada)
Fundersnot available
KeywordsMaterials scienceOptoelectronicsDielectricTransistorGate dielectricSilicon on insulatorPlasma-enhanced chemical vapor depositionThin-film transistorChemical vapor depositionPhotolithographyAmorphous solidLeakage (economics)Amorphous siliconInsulator (electricity)Silicon nitrideSaturation (graph theory)SiliconElectrical engineeringNanotechnologyLayer (electronics)VoltageCrystalline siliconEngineering

Abstract

fetched live from OpenAlex

The use of a vertical thin film transistor (VTFT) topology in the flat panel active matrix array, opens up a plethora of new high performance applications. The VTFT is small in footprint by virtue of its stacked layer configuration, in which channel lengths can be conveniently scaled down to nanometer regime without having to resort to photolithography as would otherwise be needed when scaling lateral TFTs. More importantly, the VTFT is also fully compatible to the materials and processes used in flat panel technology, takes making it amenable to large area scaling. In the VTFT, the source and drain electrodes are vertically stacked and separated by an intermediate insulator layer. The channel is formed on the vertical sidewall of the source/insulator/drain stack. Since the thickness of intermediate insulator layer defines the channel length, this can now be accurately controlled at the nanometer scale via the thickness of the insulator layer. While nanoscale channel length VTFTs in amorphous silicon (a-Si) have been demonstrated previously, one of the biggest issues was the lack of good saturation behavior at high drain voltages, which made reduction of the gate dielectric thickness mandatory. However, reducing the gate dielectric thickness leads to high gate leakage and early dielectric breakdown. This presentation is on short-channel VTFTs with excellent saturation characteristics, achieved by an ultra-thin silicon nitride (SiNx) gate dielectric using plasma-enhanced chemical vapor deposition (PECVD).

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame machine prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. The Gemma side is a direct model label for every work in the frame, read from the title-only record. The Codex side is a classifier learned from the 10,348 direct Codex labels and calibrated to design-weighted sample rates; fields without enough sample support carry no Codex call. Candidate is the union of the two sides; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: metacan-v3-hybrid-931329e0061cValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.003
Threshold uncertainty score0.010

Distilled classifier scores by category (both heads)

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.000
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0030.001

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.010
GPT teacher head0.192
Teacher spread0.182 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one source (direct Gemma or distilled Codex), not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations2
Published2009
Admission routes1
Has abstractyes

Explore more

Same topicSemiconductor materials and devicesFrench-language works237,207