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Record W2157736916 · doi:10.1117/1.jmm.14.2.024001

Mapping stresses in high aspect ratio polysilicon electrical through-wafer interconnects

2015· article· en· W2157736916 on OpenAlexafffund
Himani Sharma, Joshua D. Krabbe, Samira Farsinezhad, Andy C. van Popta, Nick G. Wakefield, Glen Fitzpatrick, Karthik Shankar

Bibliographic record

VenueJournal of Micro/Nanolithography MEMS and MOEMS · 2015
Typearticle
Languageen
FieldEngineering
Topic3D IC and TSV technologies
Canadian institutionsNational Institute for NanotechnologyMicralyneUniversity of Alberta
FundersNational Research Council CanadaNatural Sciences and Engineering Research Council of CanadaAlberta Innovates - Technology Futures
KeywordsMaterials scienceWaferOptoelectronicsDeep reactive-ion etchingChemical vapor depositionMicroelectromechanical systemsRaman spectroscopySiliconPolysilicon depletion effectReactive-ion etchingEtching (microfabrication)Electronic engineeringTransistorNanotechnologyElectrical engineeringOpticsLayer (electronics)

Abstract

fetched live from OpenAlex

Electrical through-wafer interconnect technologies such as vertical through-silicon vias (TSVs) are essential in order to maximize performance, optimize usage of wafer real estate, and enable three-dimensional packaging in leading edge electronic and microelectromechanical systems (MEMS) products. Although copper TSVs have the advantage of low resistance, highly doped polysilicon TSVs offer designers a much larger range of processing options due to the compatibility of polysilicon with high temperatures and also with the full range of traditional CMOS processes. Large stresses are associated with both Cu and polysilicon TSVs, and their accurate measurement is critical for determining the keep-out zone (KOZ) of transistors and for optimizing downstream processes to maintain high yield. This report presents the fabrication and stress characterization of 400-μm deep, 20-Ω resistance, high aspect ratio (25:1) polysilicon TSVs fabricated by deep reactive ion etching (DRIE) followed by low-pressure chemical vapor deposition (LPCVD) of polysilicon with in-situ boron doping. Micro-Raman imaging of the wafer surface showed a maximum stress of 1.2 GPa occurring at the TSV edge and a KOZ of ∼9 to 11 μm. For polysilicon TSVs, the stress distribution in the TSVs far from the wafer surface(s) was not previously well-understood due to measurement limitations. Raman spectroscopy was able to overcome this limitation; a TSV cross section was examined and stresses as a function of both depth and width of the TSVs were collected and are analyzed herein. An 1100°C postanneal was found to reduce average stresses by 40%.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.068
Threshold uncertainty score0.673

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0010.001
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.016
GPT teacher head0.219
Teacher spread0.203 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations1
Published2015
Admission routes2
Has abstractyes

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