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Record W3136601757 · doi:10.1116/6.0000914

Hf1−xZrxO2 and HfO2/ZrO2 gate dielectrics with extremely low density of interfacial defects using low temperature atomic layer deposition on GaN and InP

2021· article· en· W3136601757 on OpenAlexafffund
Kaveh Ahadi, Ken Cadien

Bibliographic record

VenueJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2021
Typearticle
Languageen
FieldEngineering
TopicSemiconductor materials and devices
Canadian institutionsUniversity of Alberta
FundersNatural Sciences and Engineering Research Council of CanadaAlberta Innovates - Technology Futures
KeywordsMaterials scienceBand gapOptoelectronicsDielectricBand offsetGate dielectricEllipsometryAtomic layer depositionHeterojunctionAnnealing (glass)X-ray photoelectron spectroscopyAnalytical Chemistry (journal)Thin filmTransistorNanotechnologyVoltageChemistryValence band

Abstract

fetched live from OpenAlex

Achieving a negative capacitance field effect transistor with a subthreshold swing beyond the Boltzmann limit requires a “defect-free” dielectric-semiconductor interface. We grew alloyed (Hf1−xZrxO2) and stacked (HfO2/ZrO2) gate dielectrics on GaN and InP substrates using low temperature plasma enhanced atomic layer deposition. In situ ellipsometry data show that alloying hafnia with zirconia reduces the refractive index and widens the bandgap. The stacked and alloyed structures reveal very low capacitance-voltage hysteresis of 35 and 45 mV, respectively, on GaN. The density of interfacial traps as low as 1.12 × 1010 cm−2 eV−1 was achieved on GaN mainly due to the combination of very low dielectric growth temperature (100 °C) and high postfabrication heat treatment temperature (510 °C). The conduction and valence band offsets of the alloyed gate dielectrics on InP were measured and compared to pure zirconia using a combination of x-ray photoelectron spectroscopy and ellipsometry. The alloyed structures show a wider bandgap, larger conduction band offset, and smaller valence band offset compared to pure zirconia. This was attributed to the increase in the valence band width with hafnia addition, which reduces the alloyed gate dielectric’s valence band offset. We resolved the band structure alignement to be type I with band offsets of 3.53 eV for electrons and 1.03 eV for holes in Hf0.25Zr0.75O2/InP heterojunctions. The results allow for a clear and detailed picture of two distinct growth procedure that affect the interfacial defect concentration.

Fetched live from OpenAlex and de-inverted. Abstracts are not stored in this database: the inverted indexes are 8.6 GB of the frame’s 9.3 GB of text, and the host has 13 GB free.

How this classification was reachedexpand

Full frame distilled prediction

Teacher imitation

Not calibrated prevalence, not ground truth. Human validation pending. Learned from the 10,348 direct Codex labels and 10,348 direct Gemma labels. Candidate is the union of thresholded teacher heads; consensus is their intersection. These outputs are machine_predicted_unvalidated and are not human labels or direct frontier model labels.

metaresearch head score (Codex)0.000
metaresearch head score (Gemma)0.000
Version: codex-gemma-dda1882f352aValidation status: machine_predicted_unvalidated
Candidate categoriesnone
Consensus categoriesnone
DomainCandidate signal: none · Consensus signal: none
Study designCandidate signal: Bench or experimental · Consensus signal: Bench or experimental
GenreCandidate signal: Empirical · Consensus signal: Empirical
Teacher disagreement score0.006
Threshold uncertainty score0.664

Codex and Gemma teacher scores by category

CategoryCodexGemma
Metaresearch0.0000.000
Meta-epidemiology (narrow)0.0000.000
Meta-epidemiology (broad)0.0000.000
Bibliometrics0.0000.001
Science and technology studies0.0000.000
Scholarly communication0.0000.000
Open science0.0000.000
Research integrity0.0000.000
Insufficient payload (model declined to judge)0.0000.000

Machine scores (provisional)

The two teacher heads of the student model, read on this work. A score orders the frame for review; it never asserts a category, and the validation status ships verbatim with every row.

Baseline scores from an immature model (maturity gate not passed, 7 training rounds). Scores rank; they never assert a category.

Opus teacher head0.009
GPT teacher head0.216
Teacher spread0.207 · how far apart the two teachers sit on this one work
Validation statusscore_only:v0-immature-baseline · verbatim from the scoring run: score_only means the number may rank works, and no category label ships from it

Classification

machine, unvalidated

Machine predicted; a candidate call from one teacher head, not a consensus.

The models applied no category: nothing in the taxonomy fit this work.
Study designBench or experimental
Domainnot available
GenreEmpirical

How this classification was reached, model by model and score by score, is at the end of the page under "How this classification was reached".

Quick stats

Citations17
Published2021
Admission routes2
Has abstractyes

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